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Journal Articles

Challenge of the development of high performance SiC semiconductor devices

Oshima, Takeshi

Hoshasen To Sangyo, (105), p.12 - 18, 2005/03

http://ci.nii.ac.jp/naid/40006658308

no abstracts in English

Journal Articles

Electrical activation of phosphorus-donors introduced in 6H-SiC by hot-implantation

Oshima, Takeshi; Abe, Koji*; Ito, Hisayoshi; Yoshikawa, Masahito; Kojima, Kazutoshi; Nashiyama, Isamu*; Okada, Sohei

Applied Physics A, 71(2), p.141 - 145, 2000/10

https://doi.org/10.1007/PL00021109

no abstracts in English

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